Instrukcja obsługi Microchip HV7350

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 2016 Microchip Technology Inc. DS20005627A-page 1

HV7350

Features

• HVCMOS® Technology for High Performance

• High-density Integrated Ultrasound Transmitter

• 0V to ±60V Output Voltage

• ±1A Source and Sink Current in Pulse Mode

• ±1A Source and Sink Current in Return-to-Zero

(RTZ) Mode

• Up to 20 MHz Operating Frequency

• Matched Delay Times

• Optional Clock Realignment

• 3.3V CMOS Logic Interface and Reference

• +3.3V Low-voltage Supply for VDD

• Built-in Linear Regulators for Floating Gate

Drivers

• Built-in Output Drain Diodes and Bleed Resistors

Applications

• Portable Medical Ultrasound Imaging

• Piezoelectric Transducer Drivers

• Pulse Waveform Generator

General Description

The HV7350 is an 8-channel monolithic high-voltage

high-speed pulse generator with built-in fast return to

zero-damping FETs. This high-voltage and high-speed

integrated circuit is designed for portable medical

ultrasound imaging system.

The HV7350 consists of a controller logic interface

circuit, level translators, MOSFET gate drives, and

high-current power P-channel and N-channel

MOSFETs as the output stage for each channel.

The output peak currents of each channel are

guaranteed to be over ±1A with up to ±60V pulse

swings as well as Return-to-Zero mode. The gate

drivers for the output MOSFETs are powered by built-in

linear 5V regulators referenced to VPP and VNN. This

direct coupling topology of the gate drivers not only

saves four floating voltage supplies or AC coupling

capacitors per channel but also makes the PCB layout

smaller and easier.

An input clock pin is available to realign all the logic

input control lines to a master clock. Precise logic

timing is always essential in any ultrasound systems.

Package Type

56-lead (8 X 8) QFN

(Top view)

See Table 2-1 for pin information.

8-Channel High-Speed ±60V ±1A Ultrasound RTZ Pulser

HV7350

DS20005627A-page 2  2016 Microchip Technology Inc.

Typical Application Circuit

CPF

VDD

+3.3V

3.3V Logic

RGND

HVOUT1

VPP

+10 to +60V

-10 to -60V

P-Driver

N-Driver

1 of 8 Channels

Logic

Level

Translator

-5.0V

RGND

DMP

1.0µF

VPF

VNF

LRP

CPOS

GND

SUB

REN

OEN

PIN1

NIN1

PIN8

NIN8

CLK

DAP

LRP

GND

LRN

GND

VNF

VPF

LRN

GND

GND CNEG CNF VNN

+5.0V

-5.0V

1.0µF

1.0µF 1.0µF

TX1

1.0µF 1.0µF

VLL

+3.3V

0.1µF

+5.0V

 2016 Microchip Technology Inc. DS20005627A-page 3

HV7350

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

GND and Substrate Voltage, VSUB ........................................................................................................................... 0V

Positive Logic Supply, VLL .......................................................................................................................–0.5V to +5.5V

Positive Logic and Level Translator Supply, VDD .................................................................................... –0.5V to +5.5V

Positive Level Translator Decoupling Pin, CPOS to GND ........................................................................–0.5V to +5.5V

Negative Level Translator Decoupling Pin, CNEG to GND ......................................................................+0.5V to –5.5V

Positive Floating Gate Driver Decoupling Pin, V

PP–CPF..........................................................................–0.5V to +5.5V

Floating Gate Driver Decoupling Pin, CNF–VNN.......................................................................................–0.5V to +5.5V

Differential High-voltage Supply, VPP–VNN ........................................................................................................... +130V

High-voltage Positive Supply, VPP ............................................................................................................–0.5V to +65V

High-voltage Negative Supply, VNN ......................................................................................................... +0.5V to –65V

All Logic Input CLK, PIN

X, NINX, OEN and REN Voltages ......................................................................–0.5V to +5.5V

Operating Junction Temperature, TJ.....................................................................................................–40°C to +125°C

Storage Temperature, TS......................................................................................................................–65°C to +150°C

ESD Rating (Note 1).................................................................................................................................ESD Sensitive